Effects of Charge Impurities and Laser Energy on Raman Spectra of Graphene

被引：31

作者：

Hulman, Martin ^{[1
,2
]}

Haluska, Miroslav ^{[3
,4
]}

Scalia, Giusy ^{[3
,5
]}

Obergfell, Dirk ^{[3
]}

Roth, Siegmar ^{[3
]}

机构：

[1] Danubia NanoTech, Bratislava 81219, Slovakia

[2] Austrian Res Ctr, A-2444 Seibersdorf, Austria

[3] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[4] Eindhoven Univ Technol, Dept Mech Engn, NL-5600 MB Eindhoven, Netherlands

[5] ENEA CR Portici, Portici, Italy

来源：

NANO LETTERS | 2008年 / 8卷 / 11期

关键词：

D O I：

10.1021/nl8014439

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The position and width of the Raman G-line was analyzed for unintentionally doped single-layered graphene samples. Results indicate a significant heating of the monolayer by the laser beam. Moreover, a weak additional component was resolved in the G-band. The position of the line is independent of the level of doping of the sample. We conclude that this new component is due to the phonons coupled to the intraband electronic transitions.

引用

页码：3594 / 3597

页数：4

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