A 100 Watt W-Band MPM TWT

被引：0

作者：

Kowalczyk, Richard ^{[1
]}

Zubyk, Andrew ^{[1
]}

Meadows, Clark ^{[1
]}

Martin, Mike ^{[1
]}

Kirshner, Mark ^{[1
]}

True, Richard ^{[1
]}

Theiss, Al ^{[1
]}

Rominger, John ^{[1
]}

Armstrong, Carter ^{[1
]}

机构：

[1] L3 Commun Electron Devices Div, San Carlos, CA 94070 USA

来源：

2013 IEEE 14TH INTERNATIONAL VACUUM ELECTRONICS CONFERENCE (IVEC) | 2013年

关键词：

millimeter wave devices; power amplifiers; MPMs;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

L-3 EDD has developed a W-Band TWT with 100 W RF power over 4 GHz of bandwidth around 94 GHz suitable for MPM integration. The TWT employs an aperture grid modulated electron gun with mod-anode current control, a serpentine waveguide interaction circuit, and a single-stage depressed collector. Two TWTs have been built and tested to over 100 W pulsed output power. The first unit has been operated at high duty, producing 65 W CW output power and 75 W average pulsed power with reduced beam current. The TWT is designed for ease of manufacture, and is suitable for MPM integration, relying on conduction cooling and capable of operation to an altitude of 50k feet.

引用

页数：2

共 50 条

[41] Delivery of Polarization-Division-Multiplexing Wireless Millimeter-Wave Signal Over 4.6-km at W-Band [J].

Wang, Feng ;

Yu, Jianjun ;

Wang, Yanyi ;

Li, Weiping ;

Zhu, Bowen ;

Ding, Junjie ;

Wang, Kaihui ;

Liu, Cuiwei ;

Wang, Chen ;

Kong, Miao ;

Zhao, Li ;

Zhao, Feng ;

Zhou, Wen .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2022, 40 (19) :6339-6346

[42] First Demonstration of W-Band Tri-gate GaN-HEMT Power Amplifier MMIC With 30 dBm Output Power [J].

Ture, E. ;

Brueckner, P. ;

Alsharef, M. ;

Granzner, R. ;

Schwierz, F. ;

Quay, R. ;

Ambacher, O. .

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, :35-37

[43] Interference Based W-Band Single-Pole Double-Throw With Tunable Liquid Crystal Based Waveguide Phase Shifters [J].

Jost, M. ;

Reese, R. ;

Nickel, M. ;

Schmidt, S. ;

Maune, H. ;

Jakoby, R. .

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, :184-187

[44] A W-band 21.1 dBm Power Amplifier with an 8-way Zero-degree Combiner in 45 nm SOI CMOS [J].

Tai, Wei ;

Ricketts, David S. .

2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2014,

[45] Development of an E-Band CW Space TWT With Substantial Improvement in Performance [J].

Li, Zhiliang ;

Qu, Bo ;

Li, Mengyuan ;

Wang, Long ;

Liang, Xiaofeng ;

Wei, Jinghui ;

Yu, Wenjie ;

Feng, Jinjun .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (03) :2111-2115

[46] A 100 W Tri-Band LDMOS Integrated Doherty Amplifier for LTE-Advanced Applications [J].

Moronval, X. ;

van der Zanden, J. ;

Ercoli, M. .

2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2015,

[47] Broadband 8 W Ka-band MMIC Power Amplifier Using 100 nm GaN Technology [J].

Fakhfakh, Seifeddine ;

Driad, Samira ;

Fellon, Philippe ;

Madel, Manfred ;

Linh Trinh-Xuan ;

Blanck, Herve ;

Camiade, Marc .

2022 17TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2022), 2022, :99-102

[48] Experimental Demonstration of a 10-kW-Level G-Band Gyro-TWT [J].

Jiang, Wei ;

Lu, Chaoxuan ;

Zhou, Jianwei ;

Dai, Boxin ;

Liu, Guo ;

Wang, Jianxun ;

Yao, Yelei ;

Han, Binyang ;

Zhou, Wei ;

Luo, Yong .

IEEE ELECTRON DEVICE LETTERS, 2024, 45 (05) :905-908

[49] A W-Band Wide 1-dB Bandwidth Power Amplifier With Parallel Inductance Enhanced Coupling Transformer in 0.13-μm SiGe BiCMOS Technology [J].

Lu, Qijun ;

Zhao, Zhengyang ;

Huang, Yongqi ;

Zhang, Tao ;

Yin, Xiangkun ;

Zhu, Zhangming .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2025,

[50] 37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications [J].

Nakasha, Yasuhiro ;

Kumazaki, Yusuke ;

Ozaki, Shiro ;

Okamoto, Naoya ;

Hara, Naoki ;

Yamada, Atsushi ;

Ohki, Toshihiro .

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2025, 35 (03) :358-361

← 1 2 3 4 5 →