THE ANALYSIS OF ACCURACY OF SELECTED METHODS OF MEASURING THE THERMAL RESISTANCE OF IGBTs

被引：39

作者：

Gorecki, Krzysztof ^{[1
]}

Gorecki, Pawel ^{[1
]}

机构：

[1] Gdynia Maritime Univ, Fac Elect Engn, Morska 83, PL-81225 Gdynia, Poland

来源：

METROLOGY AND MEASUREMENT SYSTEMS | 2015年 / 22卷 / 03期

关键词：

IGBT; thermal resistance; measurements; transistor; semiconductor devices; SEMICONDUCTOR-DEVICES; MANAGEMENT; CIRCUITS; MOSFETS; MODEL;

D O I：

10.1515/mms-2015-0036

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In the paper selected methods of measuring the thermal resistance of an IGBT (Insulated Gate Bipolar Transistor) are presented and the accuracy of these methods is analysed. The analysis of the measurement error is performed and operating conditions of the considered device, at which each measurement method assures the least measuring error, are pointed out. Theoretical considerations are illustrated with some results of measurements and calculations.

引用

页码：455 / 464

页数：10

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