共 29 条
Capacitorless Self-Clocked All-Digital Low-Dropout Regulator
被引:36
作者:
Akram, Muhammad Abrar
[1
]
Hong, Wook
[1
,2
]
Hwang, In-Chul
[1
]
机构:
[1] Kangwon Natl Univ, Dept Elect & Elect Engn, Chunchon 24341, South Korea
[2] Raon Tech, Seongnam 13567, South Korea
基金:
新加坡国家研究基金会;
关键词:
Capacitorless;
fast transient;
power efficient;
self-clocked digital low-dropout regulator (SC-DLDO);
self-shifting bidirectional shift registers (SS-BiSHRs);
POWER-SUPPLY REJECTION;
FAST-TRANSIENT;
LDO;
CMOS;
MANAGEMENT;
D O I:
10.1109/JSSC.2018.2871039
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This paper presents a capacitorless self-clocked digital low-dropout (SC-DLDO) regulator with self-shifting bidirectional shift registers (SS-BiSHRs) for power management applications in a system-on-chip (SoC). The load transient response is accelerated by utilizing coarse-then-fine control. Our voltage-range detector ensures accurate transition between coarse and fine loops without glitches or spikes in the output voltage. Moreover, the proposed SS-BiSHRs reduce the transient response time while minimizing the voltage under/overshoot. In addition, we propose a unary-binary segmentation (UBS) scheme of the power transistors. The UBS scheme offers a good balance between speed and resolution of the switch array. The proposed SC-DLDO fabricated on a 65-nm CMOS process with an active area of 0.069 mm(2) achieves a minimum dropout voltage of 40 mV or less at the input voltage of 0.7-1.2 V. The measurement results show that with the step load current alternating between 1 and 90 mA, the proposed capacitorless SC-DLDO shows a transient response time of 77 ns with an undershoot of 96 mV at a regulated output voltage of 0.66 V and it attains the peak current and power efficiencies of 99.86% and 94.16%, respectively.
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页码:266 / 276
页数:11
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