Laser driven impurity states in two-dimensional quantum dots and quantum rings

被引:22
|
作者
Laroze, D. [1 ]
Barseghyan, M. [2 ,3 ]
Radu, A. [4 ]
Kirakosyan, A. A. [2 ]
机构
[1] Univ Tarapaca, Inst Alta Invest, Casilla 7D, Arica, Chile
[2] Yerevan State Univ, Dept Solid State Phys, Alex Manoogian 1, Yerevan 0025, Armenia
[3] Natl Univ Architecture & Construct Armenia, Teryan 105, Yerevan 0009, Armenia
[4] Univ Politehn Bucuresti, Dept Phys, 313 Splaiul Independentei, RO-060042 Bucharest, Romania
关键词
Quantum dots; Quantum rings; Laser field; Donor impurity; Exact diagonalization technique; DRESSED DONOR;
D O I
10.1016/j.physb.2016.08.008
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The hydrogenic donor impurity states in two-dimensional GaAs/Ga0.7Al0.3As quantum dot and quantum ring have been investigated under the action of intense laser field. A laser dressed effect on both electron confining and electron-impurity Coulomb interaction potentials has been considered. The single electron energy spectrum and wave functions have been found using the effective mass approximation and exact diagonalization technique. The accidental degeneracy of the impurity states have been observed for different positions of the impurity and versus values of the laser field parameter. The obtained theoretical results indicate a novel opportunity to tune the performance of quantum dots and quantum rings and to control their specific properties by means of laser field. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 4
页数:4
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