Impact of Alpha Particles on the Electrical Characteristics of TiO2 Memristors

被引：40

作者：

Barnaby, H. J. ^{[1
]}

Malley, S. ^{[1
]}

Land, M. ^{[1
]}

Charnicki, S. ^{[1
]}

Kathuria, A. ^{[1
]}

Wilkens, B. ^{[2
]}

DeIonno, E. ^{[3
]}

Tong, W. M. ^{[4
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, LeRoy Eyring Ctr Solid State Sci, Tempe, AZ 85287 USA

[3] Aerosp Corp, El Segundo, CA 90245 USA

[4] TransEL Corp, Albuquerque, NM 87111 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2011年 / 58卷 / 06期

关键词：

Alpha particles; displacement damage; memristor; TiO2;

D O I：

10.1109/TNS.2011.2168827

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Titanium-oxide (TiO2) memristors exposed to 1-MeV alpha particles exhibit only minor changes in the electrical response for ion fluencies up to 10(14) cm(-2). At higher fluence levels, virgin and off-state devices exhibit measurable increases in current conduction between the two platinum (Pt) electrodes. Analysis, supported by radiation transport and numerical device simulations, suggests that radiation-induced displacement damage in the TiO2 film increases the density of oxygen vacancies, thereby altering both resistivity in the bulk of the transition-metal oxide and the junction characteristics of Pt-TiO2 interface. Nevertheless, the experimental results indicate continued switching functionality of the memristors even after exposure to 10(15) cm(-2) alpha particles. The high intrinsic vacancy density in the devices prior to radiation exposure is identified as the primary feature contributing to apparent radiation hardness.

引用

页码：2838 / 2844

页数：7

共 11 条

[1] Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model [J].

Ieong, M ;

Solomon, PM ;

Laux, SE ;

Wong, HSP ;

Chidambarrao, D .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :733-736

[2] Electrical and defect thermodynamic properties of nanocrystalline titanium dioxide [J].

Knauth, P ;

Tuller, HL .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :897-902

[3]

Pickett M. D., 2009, J APPL PHYS, V106

[4]

Rajendran J., 2010, P IEEE ACM INT S NAN

[5]

*SILV INT, 2001, ATL 7 0 US MAN

[6] The switching location of a bipolar memristor: chemical, thermal and structural mapping [J].

Strachan, John Paul ;

Strukov, Dmitri B. ;

Borghetti, Julien ;

Yang, J. Joshua ;

Medeiros-Ribeiro, Gilberto ;

Williams, R. Stanley .

NANOTECHNOLOGY, 2011, 22 (25)

[7] Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior [J].

Strukov, Dmitri B. ;

Borghetti, Julien L. ;

Williams, R. Stanley .

SMALL, 2009, 5 (09) :1058-1063

[8] Radiation Hardness of TiO2 Memristive Junctions [J].

Tong, William M. ;

Yang, J. Joshua ;

Kuekes, Philip J. ;

Stewart, Duncan R. ;

Williams, R. Stanley ;

DeIonno, Erica ;

King, Everett E. ;

Witczak, Steven C. ;

Looper, Mark D. ;

Osborn, Jon V. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (03) :1640-1643

[9] Simulated Effects of Proton and Ion Beam Irradiation on Titanium Dioxide Memristors [J].

Vujisic, Milos ;

Stankovic, Koviljka ;

Marjanovic, Nada ;

Osmokrovic, Predrag .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2010, 57 (04) :1798-1804

[10] Memristive switching mechanism for metal/oxide/metal nanodevices [J].

Yang, J. Joshua ;

Pickett, Matthew D. ;

Li, Xuema ;

Ohlberg, Douglas A. A. ;

Stewart, Duncan R. ;

Williams, R. Stanley .

NATURE NANOTECHNOLOGY, 2008, 3 (07) :429-433

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