Electron Doping by Charge Transfer at LaFeO3/Sm2CuO4 Epitaxial Interfaces

被引：9

作者：

Bruno, Flavio Y. ^{[1
]}

Schmidt, Rainer ^{[1
]}

Varela, Maria ^{[1
,2
]}

Garcia-Barriocanal, Javier ^{[1
]}

Rivera-Calzada, Alberto ^{[1
]}

Cuellar, Fabian A. ^{[1
]}

Leon, Carlos ^{[1
]}

Thakur, Pardeep ^{[3
]}

Cezar, Julio C. ^{[3
]}

Brookes, Nicholas B. ^{[3
]}

Garcia-Hernandez, Mar ^{[4
]}

Dagotto, Elbio ^{[2
,5
]}

Pennycook, Stephen J. ^{[2
]}

Santamaria, Jacobo ^{[1
]}

机构：

[1] Univ Complutense Madrid, GFMC Dpto Fis Aplicada 3, E-28040 Madrid, Spain

[2] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[3] European Synchrotron Radiat Facil, F-38043 Grenoble, France

[4] CSIC, Inst Ciencia Mat Madrid, Canto Blanco 28049, Spain

[5] Univ Tennessee, Dept Phys & Astron, Knoxville, TN 37996 USA

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 10期

关键词：

charge transfer; interface phenomena; superlattices; RAY-ABSORPTION-SPECTROSCOPY; ENERGY-LOSS; RECONSTRUCTION; INSULATOR; OXYGEN;

D O I：

10.1002/adma.201203483

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Using X-ray absorption spectroscopy and electron energy loss spectroscopy with atomic-scale spatial resolution, experimental evidence for charge transfer at the interface between the Mott insulators Sm2CuO4 and LaFeO3 is obtained. As a consequence of the charge transfer, the Sm2CuO4 is doped with electrons and thus epitaxial Sm 2CuO4/LaFeO3 heterostructures become metallic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1468 / 1473

页数：6

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