Evaluation of the High Temperatures Influence on High Frequency C-V Curves of MOS Capacitor

被引：15

作者：

Borges Ziliotto, Ana Paula ^{[1
]}

Bellodi, Marcello ^{[1
]}

机构：

[1] Ctr Univ FEI, Dept Elect, Sao Bernardo Campo, BR-09850901 Sao Paulo, Brazil

来源：

STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 53 (SOTAPOCS 53) | 2011年 / 41卷 / 06期

关键词：

D O I：

10.1149/1.3629964

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

It is presented numerical bi-dimensional simulations results concerning the high frequency capacitance versus voltage (C-V) characteristic of the MOS capacitor operating from room temperature up to 573K using AC analysis. The results show that the C-V curves behavior is influenced by substrate doping concentration, substrate and gate materials. Also, it is presented experimental results concerning to the high frequency C-V characteristic of a sample MOS capacitor, confirming the results obtained through simulations.

引用

页码：163 / 173

页数：11