Semiconducting Properties of Swift Au Ion-Irradiated ZnO Thin Films at Room Temperature

被引：5

作者：

Kwon, Sera ^{[1
]}

Park, Hyun-Woo ^{[1
]}

Chung, Kwun-Bum ^{[1
]}

机构：

[1] Dongguk Univ, Div Phys & Semicond Sci, Seoul 100715, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2017年 / 46卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Zinc oxide; semiconducting properties; swift heavy ion; Au ion irradiation; electronic structure; SPECTROSCOPY; PERFORMANCE; DEFECTS;

D O I：

10.1007/s11664-016-5105-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The semiconducting properties of Au ion-irradiated ZnO thin films were investigated as a function of ion irradiation dose at room temperature. The Au ion irradiation was conducted with acceleration energy of 130 MeV in the ion dose range from 1 x 10(11) to 5 x 10(12) ions/cm(2). The physical properties showed no change regardless of the Au ion irradiation dose; however, the electrical properties of Au ion-irradiated ZnO thin films changed, depending on the Au ion irradiation dose. The electronic structure drastically changed with the evolution of hybridized molecular orbital structure for the conduction band and band edge states below the conduction band. These remarkable changes in electronic structure correlate with changes in electrical properties, such as carrier concentration and mobility.

引用

页码：1210 / 1214

页数：5

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