Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3

被引：3
作者：
Yi, Wei [1 ]
Chen, Jun [2 ]
Sekiguchi, Takashi [1 ,2 ]
机构：
[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[2] Univ Tsukuba, Fac Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan
来源：
CRYSTALS | 2020年 / 10卷 / 09期
关键词：
SrTiO3; dislocation; EBIC; CL; OXYGEN; RESISTANCE;
D O I：
10.3390/cryst10090736
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Electron-beam-induced current (EBIC) and cathodoluminescence (CL) have been applied to investigate the electrical and optical behaviors of dislocations in SrTiO3. The electrical recombination activity and defect energy levels of dislocations have been deduced from the temperature-dependent EBIC measurement. Dislocations contributed to resistive switching were clarified by bias-dependent EBIC. The distribution of oxygen vacancies around dislocations has been obtained by CL mapping. The correlation between switching, dislocation and oxygen vacancies was discussed.
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页码：1 / 8
页数：8
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共 28 条
  • [1] Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction in Bi:SrTiO3
    Ang, C
    Yu, Z
    Cross, LE
    [J]. PHYSICAL REVIEW B, 2000, 62 (01) : 228 - 236
  • [2] Anisotropic magnetotransport in SrTiO3 surface electron gases generated by Ar+ irradiation
    Bruno, F. Y.
    Tornos, J.
    Gutierrez del Olmo, M.
    Sanchez Santolino, G.
    Nemes, N. M.
    Garcia-Hernandez, M.
    Mendez, B.
    Piqueras, J.
    Antorrena, G.
    Morellon, L.
    De Teresa, J. M.
    Clement, M.
    Iborra, E.
    Leon, C.
    Santamaria, J.
    [J]. PHYSICAL REVIEW B, 2011, 83 (24)
  • [3] NON-STOICHIOMETRY IN SRTIO3
    CHAN, NH
    SHARMA, RK
    SMYTH, DM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) : 1762 - 1769
  • [4] Electron-beam-induced current study of grain boundaries in multicrystalline silicon
    Chen, J
    Sekiguchi, T
    Yang, D
    Yin, F
    Kido, K
    Tsurekawa, S
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (10) : 5490 - 5495
  • [5] Investigation of dislocations in Nb-doped (100) SrTiO3 single crystals and their impacts on resistive switching
    Chen, Jun
    Sekiguchi, Takashi
    Li, Jianyong
    Ito, Shun
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2016, 99 : 182 - 185
  • [6] Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy
    Chen, Jun
    Sekiguchi, Takashi
    Li, Jianyong
    Ito, Shun
    Yi, Wei
    Ogura, Atsushi
    [J]. APPLIED PHYSICS LETTERS, 2015, 106 (10)
  • [7] Behavior of oxygen vacancies in single-crystal SrTiO3: Equilibrium distribution and diffusion kinetics
    De Souza, Roger A.
    Metlenko, Veronika
    Park, Daesung
    Weirich, Thomas E.
    [J]. PHYSICAL REVIEW B, 2012, 85 (17):
  • [8] Electrical properties and colossal electroresistance of heteroepitaxial SrRuO3/SrTi1-xNbxO3 (0.0002≤x≤0.02) Schottky junctions
    Fujii, T.
    Kawasaki, M.
    Sawa, A.
    Kawazoe, Y.
    Akoh, H.
    Tokura, Y.
    [J]. PHYSICAL REVIEW B, 2007, 75 (16)
  • [9] Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory
    Janousch, Markus
    Meijer, G. Ingmar
    Staub, Urs
    Delley, Bernard
    Karg, Siegfried F.
    Andreasson, Bjorn P.
    [J]. ADVANCED MATERIALS, 2007, 19 (17) : 2232 - +
  • [10] Electron beam induced current investigations of Pt/SrTiO3-x interface exposed to chemical and electrical stresses
    Jiang, W.
    Evans, D.
    Bain, J. A.
    Skowronski, M.
    Salvador, P. A.
    [J]. APPLIED PHYSICS LETTERS, 2010, 96 (09)
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