Five-Megahertz PWM-Controlled Current-Mode Resonant DC-DC Step-Down Converter Using GaN-HEMTs

被引：17

作者：

Hariya, Akinori ^{[1
]}

Matsuura, Ken ^{[2
]}

Yanagi, Hiroshige ^{[3
]}

Tomioka, Satoshi ^{[3
]}

Ishizuka, Yoichi ^{[4
]}

Ninomiya, Tamotsu ^{[5
]}

机构：

[1] Nagasaki Univ, Grad Sch Engn, Nagasaki 8528521, Japan

[2] TDK Corp, Ichikawa 2728558, Japan

[3] TDK Lambda Corp, Nagaoka, Niigata 9401195, Japan

[4] Nagasaki Univ, Sch Engn, Dept Elect & Elect Engn, Nagasaki 8528521, Japan

[5] Asian Growth Res Inst, Kitakyushu, Fukuoka 8030814, Japan

来源：

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS | 2015年 / 51卷 / 04期

关键词：

Direct current (dc)-dc power converters; gallium nitride; pulsewidth modulation (PWM) converters; switching converters; zero-voltage switching (ZVS); ARCHITECTURE; TRANSISTORS; DESIGN;

D O I：

10.1109/TIA.2015.2391439

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High power efficiency and high power density are required in regulated isolated dc-dc converters. In this paper, a novel pulsewidth modulation (PWM) control method that is suitable for an isolated current-mode resonant dc-dc converter operated at a megahertz-level switching frequency is proposed. The output voltage with the proposed method can be regulated with no additional components at a fixed switching frequency. In addition, the zero-voltage switching (ZVS) of primary-side switches at turn on can be maintained. The principle of the proposed method and the method of the ZVS operation in the proposed method are explained. Some experiments have been performed with a 5-MHz isolated step-down dc-dc converter using gallium nitride high-electron-mobility transistors; the output voltage is 12 V, and the total volume of the circuit is 16.14 cm3. With the proposed PWM control method, the input voltage range is 42-45.5 V, and the maximum load current range is 10 A at V-i = 45.5 V. The ZVS of the primary-side switches at turn on is confirmed in all experimental regions, and the maximum power efficiency is 89.2%.

引用

页码：3263 / 3272

页数：10

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