Magnetic anisotropy in antiferromagnetic hexagonal MnTe

被引：89

作者：

Kriegner, D. ^{[1
,2
]}

Reichlova, H. ^{[1
]}

Grenzer, J. ^{[3
]}

Schmidt, W. ^{[4
]}

Ressouche, E. ^{[5
]}

Godinho, J. ^{[1
]}

Wagner, T. ^{[6
]}

Martin, S. Y. ^{[6
,7
]}

Shick, A. B. ^{[8
]}

Volobuev, V. V. ^{[9
,10
]}

Springholz, G. ^{[9
]}

Holy, V. ^{[2
]}

Wunderlich, J. ^{[6
]}

Jungwirth, T. ^{[1
,11
]}

Vyborny, K. ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Cukrovarnicka 10, Prague 16200 6, Czech Republic

[2] Charles Univ Prague, Ke Karlovu 3, Prague 12116 2, Czech Republic

[3] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, Bautzner Landstr 400, D-01328 Dresden, Germany

[4] Forschungszentrum Julich, Outstn ILL, JCNS, CS 20156,71 Ave Martyrs, F-38042 Grenoble, France

[5] Univ Grenoble Alpes, CEA, INAC MEM, F-38000 Grenoble, France

[6] Hitachi Cambridge Lab, Cambridge CB3 0HE, England

[7] Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,INAC Spintec, F-38000 Grenoble, France

[8] Acad Sci Czech Republ, Inst Phys, Na Slovance 1999-2, Prague 18221 8, Czech Republic

[9] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, Altenbergerstr 69, A-4040 Linz, Austria

[10] Natl Tech Univ, Kharkiv Polytech Inst, UA-61002 Kharkov, Ukraine

[11] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

来源：

PHYSICAL REVIEW B | 2017年 / 96卷 / 21期

基金：

奥地利科学基金会;

关键词：

MOLECULAR-BEAM EPITAXY; NEUTRON-DIFFRACTION; MANGANESE TELLURIDE; THERMAL-EXPANSION; TEMPERATURE; BEHAVIOR; MEMORY; FILM;

D O I：

10.1103/PhysRevB.96.214418

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along < 1 (1) over bar 00 > directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from similar to 2 to similar to 0.5 T for films grown on InP and SrF2 substrates, respectively.

引用

页数：8

共 44 条

[1] CONTROL OF THE CRYSTAL ORIENTATION OF ZINCBLENDE MNTE EPITAXIAL-FILMS GROWN ON GAAS [J].