On the performance of low-noise low-dc-power-consumption cryogenic amplifiers

被引：19
作者：
Angelov, I [1 ]
Wadefalk, N
Stenarson, J
Kollberg, EL
Starski, P
Zirath, H
机构：
[1] Chalmers Univ Technol, Dept Microwave Technol, S-41296 Gothenburg, Sweden
[2] Ericsson, Microsyst Syst AB, S-4384 Molndal, Sweden
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2002年 / 50卷 / 06期
关键词：
empirical large-signal models; FET; FET noise models; modeling; noise model extraction; noise parameter;
D O I：
10.1109/TMTT.2002.1006408
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of broad-band low-noise low-dc-power-consumption cryogenic amplifiers have been studied in detail with emphasis on minimizing the power consumption and optimizing the amplifier performance at cryogenic temperature. A general approach is presented for the modeling and amplifier design, which helps in minimizing the power consumption and optimizing the performance of the amplifier. A noise temperature below 9 K and 22-dB gain was experimentally obtained in the frequency range of 4-8 GHz with a total power consumption of 4 mW with commercial GaAs transistors.
引用
收藏
页码：1480 / 1486
页数：7
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