Electronic conduction in a model three-terminal molecular transistor

被引:14
|
作者
He, Haiying [1 ,2 ]
Pandey, Ravindra [1 ,2 ]
Karna, Shashi P. [3 ]
机构
[1] Michigan Technol Univ, Dept Phys, Houghton, MI 49931 USA
[2] Michigan Technol Univ, Multi Scale Technol Inst, Houghton, MI 49931 USA
[3] USA, Res Lab, Weapons & Mat Res Directorate, ATTN AMSRD ARL WM, Aberdeen Proving Ground, MD 21005 USA
关键词
D O I
10.1088/0957-4484/19/50/505203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The electronic conduction of a novel, three-terminal molecular architecture, analogous to a heterojunction bipolar transistor, is studied. In this architecture, two diode arms consisting of donor-acceptor molecular wires fuse through a ring, while a gate modulating wire is a pi-conjugated wire. The calculated results show the enhancement or depletion mode of a transistor on applying a gate field along the positive or negative direction. A small gate field is required to switch on the current in the proposed architecture. The changes in the electronic conduction can be attributed to the intrinsic dipolar molecular architecture in terms of the evolution of molecular wavefunctions, specifically the one associated with the terphenyl group of the modulating wire in the presence of the gate field.
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页数:6
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