Two-channel Kondo effects in Al/AlOx/Sc planar tunnel junctions

被引：13
作者：
Yeh, Sheng-Shiuan [1 ]
Lin, Juhn-Jong [1 ,2 ]
机构：
[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 01期
关键词：
LOW-TEMPERATURE PROPERTIES; CONDUCTANCE SIGNALS; SYSTEMS; METALS; FIELD; MODEL; IMPURITIES; SCATTERING; BEHAVIOR; CHANNEL;
D O I：
10.1103/PhysRevB.79.012411
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have measured the differential conductances G(V, T) in several Al/AlOx/Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to similar to 16 K, the zero-bias conductance G(0, T) crosses over from a standard -ln T dependence to a novel -root T dependence. Correspondingly, the finite bias conductance G(V, T) reveals a two-channel Kondo scaling behavior between similar to 4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin-1/2 Sc atoms situated slightly inside the AlOx/Sc interface.
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页数：4
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