Effects of H2 impregnation on excimer-laser-induced oxygen-deficient center formation in synthetic SiO2 glass

被引:27
作者
Ikuta, Y
Kajihara, K
Hirano, M
Kikugawa, S
Hosono, H
机构
[1] Japan Sci & Technol Corp, ERATO, Transparent Electroact Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
[2] Asahi Glass Co Ltd, Kanagawa Ku, Yokohama, Kanagawa 2210862, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Yokohama, Kanagawa 227, Japan
关键词
D O I
10.1063/1.1481789
中图分类号
O59 [应用物理学];
学科分类号
摘要
We examined the effect of H-2 impregnation on defect formation upon F-2 laser (7.9 eV) and ArF excimer laser (6.4 eV) irradiation. It was revealed that H-2 impregnation enhanced the formation of oxygen-deficient center (Si-Si bond) as well as suppressed the formation of E' center and nonbridging oxygen hole center. A Si-Si bond gives an intense absorption band peaking at 7.6 eV, which contributes the absorption at the wavelength of F-2 laser light. These results indicate that H-2-free SiO2 glass, which is clearly inappropriate for KrF and ArF excimer laser optics, is more suitable for F-2 laser optics than H-2-impregnated glass. (C) 2002 American Institute of Physics.
引用
收藏
页码:3916 / 3918
页数:3
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