Novel 900 MHz/1.9 GHz dual-mode power amplifier employing MEMS switches for optimum matching

被引：37

作者：

Fukuda, A ^{[1
]}

Okazaki, H ^{[1
]}

Hirota, T ^{[1
]}

Yamao, Y ^{[1
]}

机构：

[1] Kanazawa Inst Technol, Kanazawa, Ishikawa 9218501, Japan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2004年 / 14卷 / 03期

关键词：

band switchable matching network; MEMS; multiband; power amplifiers; switch;

D O I：

10.1109/LMWC.2003.821496

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel scheme is proposed for a compact band-switchable power amplifier that employs Micro-Electro-Mechanical System (MEMS) switches in a matching network (MN). According to the-on/off status, the switches change the frequency response of the MN, and then the optimum matching can be achieved in different frequency bands. Following the proposed scheme, a dual-band GaAs FET amplifier is designed for the 0.9-GHz and 1.9-GHz bands. The experimental results exhibit the small signal gain of greater than 16 dB and the saturated output power of 31 dBm in each frequency band with adequate efficiency. The performance levels are very close to those of single-mode power amplifiers employing the same FET.

引用

页码：121 / 123

页数：3

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