"Driving"-Stress-Induced Degradation in Polycrystalline Silicon Thin-Film Transistors and Its Suppression by a Bridged-Grain Structure

被引：9

作者：

Zhang, Meng ^{[1
]}

Zhou, Wei ^{[1
]}

Chen, Rongsheng ^{[1
,2
]}

Wong, Man ^{[1
]}

Kwok, Hoi-Sing ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, State Key Lab Adv Displays & Optoelect Technol, Hong Kong, Hong Kong, Peoples R China

[2] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510641, Guangdong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 01期

关键词：

Driving" stress; polycrystalline silicon; thin film transistor; hot carrier; bridged-grain; POLY-SI TFT;

D O I：

10.1109/LED.2016.2626481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, degradation of polycrystalline silicon (poly-Si) thin-film transistors (TFTs) under "driving" stress is characterized and analyzed for the first time. Dynamic hot carrier (HC) effect, related to pulse falling time, dominates device degradation. To suppress such "driving"stress- induced dynamic HC degradation, a bridgedgrain (BG) structure is applied to the active channel of poly-Si TFTs. Due to the lateral electric field reduction at source/drain junctions, "driving"-stress-induced dynamic HC degradation is significantly improved by the BG structure. Incorporated with transient simulations, the degradation mechanism is elucidated.

引用

页码：52 / 55

页数：4

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