Voltage acceleration of time dependent breakdown of ultra-thin NO and NON dielectrics

被引：1
|
作者：
Hofmann, Peter [1 ]
机构：
[1] Qimonda Dresden GmbH & Co OHG, D-01099 Dresden, Germany
来源：
MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期
关键词：
Dynamic random access storage;
D O I：
10.1016/j.microrel.2008.06.014
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Up to now the validity of the TDDB power-law model was investigated for ultra-thin single work function and dual work function gate oxides. However due to the aggressive DRAM scaling roadmap it is not clear if the reliability of the NO and NON storage dielectrics used in state of the art memory products meets the requirements of next generation technologies with the conservative exponential voltage acceleration law. It is demonstrated that experimental data of long term tests instead Supports a much more progressive power-law voltage acceleration behavior with a universal exponent of n = 47 for a wide range of dielectric thickness. (c) 2008 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1189 / 1192
页数：4
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