Reactive Ion Etching of SixSb2Te in CF4/Ar Plasma for Nonvolatile Phase-Change Memory Device

被引：1

作者：

Gu, Yifeng ^{[1
,2
]}

Song, Sannian ^{[1
]}

Song, Zhitang ^{[1
]}

Cheng, Yan ^{[1
]}

Liu, Xuyan ^{[1
]}

Du, Xiaofeng ^{[1
]}

Liu, Bo ^{[1
]}

Feng, Sonlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2013年 / 13卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Phase-Change Material; SixSb2Te; Reactive Ion Etching; CF4/Ar Gas Ratio; THIN-FILMS; GE2SB2TE5;

D O I：

10.1166/jnn.2013.6069

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

SixSb2Te material system is novel for phase-change random access memory applications. Its properties are more outstanding than the widely used material Ge2Sb2Te5. Etching process is one of the critical steps in the device fabrication. The etching characteristics of phase-change material Si,Si(x)b(2)Te were studied with CF4/Ar gas mixture by a reactive ion etching system. The changes of etching rate, etching profile and surface root-mean-square roughness resulted from variation of the gas-mixing ratio were investigated under constant pressure (50 mTorr) and applying power (200 W). Si0.34Sb2Te is with the highest phase-change speed and the lowest power consumption in the PCRAM memory among these compositions, which means it is the most promising candidate for the PCRAM applications. So the most optimized CF4/Ar gas ratio for Si0.34Sb2Te was studied, the value is 25/25. The etching rate is 155 nm/min, and the selectivity of Si0.34Sb2Te to SiO2 is as high as 3.4 times. Furthermore, the smooth surface was achieved with this optimized gas ratio.

引用

页码：1594 / 1597

页数：4