The disintegration of GaSb/GaAs nanostructures upon capping

被引：28

作者：

Martin, Andrew J. ^{[1
]}

Hwang, Jinyoung ^{[2
]}

Marquis, Emmanuelle A. ^{[1
]}

Smakman, Erwin ^{[3
]}

Saucer, Timothy W. ^{[4
]}

Rodriguez, Garrett V. ^{[4
]}

Hunter, Allen H. ^{[1
]}

Sih, Vanessa ^{[4
]}

Koenraad, Paul M. ^{[3
]}

Phillips, Jamie D. ^{[2
]}

Millunchick, Joanna ^{[1
]}

机构：

[1] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[3] Eindhoven Univ Technol, Dept Appl Phys, NL-5612 AZ Eindhoven, Netherlands

[4] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 11期

关键词：

QUANTUM DOTS;

D O I：

10.1063/1.4796036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4796036]

引用

页数：5

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