Challenges to the concept of an intermediate band in InAs/GaAs quantum dot solar cells

被引：25
|
作者：
Li, Tian [1 ]
Bartolo, Robert E. [1 ]
Dagenais, Mario [1 ]
机构：
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 14期
关键词：
INFRARED PHOTODETECTORS; EFFICIENCY; LIMIT; GAAS;
D O I：
10.1063/1.4822322
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An InAs/GaAs quantum dot (QD) solar cell was compared to a similar bulk GaAs p-i-n structure. A 5% increase of the photocurrent was measured in the QD solar cell under Global Air Mass 1.5 condition, accompanied by a smaller value of the open circuit voltage (0.765 V) as compared with the reference GaAs device (0.922 V). The enhanced Urbach tail absorption in QD device greatly contributes to the photocurrent measured below the bandgap. This tail extension also explains the decrease in open circuit voltage in the device and makes it difficult to realize the concept of intermediate band solar cell at room temperature. (C) 2013 AIP Publishing LLC.
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页数：4
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