The strain dependence of Ge1-xsnx (x=0.083) Raman shift

被引：20

作者：

Chang, Chiao ^{[1
,2
]}

Li, Hui ^{[1
,2
]}

Chen, Tsung-Pin ^{[1
,2
]}

Tseng, Wei-Kai ^{[1
,2
]}

Cheng, Henry ^{[1
,2
]}

Ko, Chung-Ting ^{[3
]}

Hsieh, Chung-Yen ^{[3
]}

Chen, Miin-Jang ^{[3
]}

Sun, Greg ^{[4
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan

[4] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA

来源：

THIN SOLID FILMS | 2015年 / 593卷

关键词：

Germanium-tin; Molecular beam epitaxy; Raman spectroscopy; Strain; Transmission electron microscopy; X-ray diffraction; SCATTERING; SI; FREQUENCIES; SILICON; ALLOYS;

D O I：

10.1016/j.tsf.2015.09.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an investigation of strain-dependent Raman frequency shift in Ge0.917Sn0.083 epilayer where the Sn composition is near the indirect-to-direct band gap transition point. The strain is modulated by ex-situ rapid thermal annealing and the amount of strain relaxation is determined by X-ray diffraction measurement. The results show that the Raman shift of Ge-Ge longitudinal optical phonon is linearly dependent on the in-plane strain of the GeSn layers with a coefficient b = -299.3 cm(-1). Such a relationship enables characterization of GeSn epilayers using the readily accessible Raman spectroscopy. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：40 / 43

页数：4

共 24 条

[1] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
CERDEIRA, F
BUCHENAUER, CJ
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +
[2] Low-temperature buffer layer for growth of a low-dislocation-density SiGe layer on Si by molecular-beam epitaxy
Chen, H
Guo, LW
Cui, Q
Hu, Q
Huang, Q
Zhou, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (02) : 1167 - 1169
[3] Increased photoluminescence of strain-reduced, high-Sn composition Ge1-xSnx alloys grown by molecular beam epitaxy
Chen, Robert
Lin, Hai
Huo, Yijie
Hitzman, Charles
Kamins, Theodore I.
Harris, James S.
[J]. APPLIED PHYSICS LETTERS, 2011, 99 (18)
[4] Relaxed and Strained Patterned Germanium-Tin Structures: A Raman Scattering Study
Cheng, Ran
Wang, Wei
Gong, Xiao
Sun, Linfeng
Guo, Pengfei
Hu, Hailong
Shen, Zexiang
Han, Genquan
Yeo, Yee-Chia
[J]. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (04) : P138 - P145
[5] Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
Conley, Benjamin R.
Mosleh, Aboozar
Ghetmiri, Seyed Amir
Du, Wei
Soref, Richard A.
Sun, Greg
Margetis, Joe
Tolle, John
Naseem, Hameed A.
Yu, Shui-Qing
[J]. OPTICS EXPRESS, 2014, 22 (13): : 15639 - 15652
[6] Raman scattering in Ge1-ySny alloys
D'Costa, V. R.
Tolle, J.
Roucka, R.
Poweleit, C. D.
Kouvetakis, J.
Menendez, J.
[J]. SOLID STATE COMMUNICATIONS, 2007, 144 (5-6) : 240 - 244
[7] Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates
Du, Wei
Zhou, Yiyin
Ghetmiri, Seyed A.
Mosleh, Aboozar
Conley, Benjamin R.
Nazzal, Amjad
Soref, Richard A.
Sun, Greg
Tolle, John
Margetis, Joe
Naseem, Hameed A.
Yu, Shui-Qing
[J]. APPLIED PHYSICS LETTERS, 2014, 104 (24)
[8] Growth of silicon based germanium tin alloys
Kasper, E.
Werner, J.
Oehme, M.
Escoubas, S.
Burle, N.
Schulze, J.
[J]. THIN SOLID FILMS, 2012, 520 (08) : 3195 - 3200
[9] THE EVOLUTION OF SILICON-WAFER CLEANING TECHNOLOGY
KERN, W
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) : 1887 - 1892
[10] Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment
Li, H.
Cui, Y. X.
Wu, K. Y.
Tseng, W. K.
Cheng, H. H.
Chen, H.
[J]. APPLIED PHYSICS LETTERS, 2013, 102 (25)

← 1 2 3 →