The strain dependence of Ge1-xsnx (x=0.083) Raman shift

被引：22

作者：

Chang, Chiao ^{[1
,2
]}

Li, Hui ^{[1
,2
]}

Chen, Tsung-Pin ^{[1
,2
]}

Tseng, Wei-Kai ^{[1
,2
]}

Cheng, Henry ^{[1
,2
]}

Ko, Chung-Ting ^{[3
]}

Hsieh, Chung-Yen ^{[3
]}

Chen, Miin-Jang ^{[3
]}

Sun, Greg ^{[4
]}

机构：

[1] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 106, Taiwan

[4] Univ Massachusetts, Dept Engn, Boston, MA 02125 USA

来源：

THIN SOLID FILMS | 2015年 / 593卷

关键词：

Germanium-tin; Molecular beam epitaxy; Raman spectroscopy; Strain; Transmission electron microscopy; X-ray diffraction; SCATTERING; SI; FREQUENCIES; SILICON; ALLOYS;

D O I：

10.1016/j.tsf.2015.09.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an investigation of strain-dependent Raman frequency shift in Ge0.917Sn0.083 epilayer where the Sn composition is near the indirect-to-direct band gap transition point. The strain is modulated by ex-situ rapid thermal annealing and the amount of strain relaxation is determined by X-ray diffraction measurement. The results show that the Raman shift of Ge-Ge longitudinal optical phonon is linearly dependent on the in-plane strain of the GeSn layers with a coefficient b = -299.3 cm(-1). Such a relationship enables characterization of GeSn epilayers using the readily accessible Raman spectroscopy. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：40 / 43

页数：4

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