Accurate modeling of simultaneous switching noise in low voltage digital VLSI

被引：0

作者：

Song, SW ^{[1
]}

Ismail, M ^{[1
]}

Moon, G ^{[1
]}

Kim, DY ^{[1
]}

机构：

[1] Ohio State Univ, Columbus, OH 43210 USA

来源：

ISCAS '99: PROCEEDINGS OF THE 1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 6: CIRCUITS ANALYSIS, DESIGN METHODS, AND APPLICATIONS | 1999年

关键词：

low voltage CMOS; switching noise;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The origin and the effect of the simultaneous switching noise(SSN) in CMOS output drivers are explained. A new simultaneous switching noise model which includes the velocity saturation effect is presented. SPICE level 3 simulations for 0.8 mu m are used to compare compare this new model with the other recently reported two SSN models at three different supply voltage levels. The new SSN model is derived and proved with the SPICE simulations. The results of the simulations show that the new model is more accurate than the other models, especially in the case of low voltage, and large number of output buffers.

引用

页码：210 / 213

页数：4

共 8 条

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