Surface-barrier heterojunctions TiO2/CdZnTe

被引：13

作者：

Brus, V. V. ^{[1
,2
]}

Ilashchuk, M. I. ^{[2
]}

Kovalyuk, Z. D. ^{[1
]}

Maryanchuk, P. D. ^{[2
]}

Parfenyuk, O. A. ^{[2
]}

机构：

[1] NAS Ukraine, Frantsevich Inst Problems Mat Sci, Chernivtsi Branch, UA-58001 Chernovtsy, Ukraine

[2] Yuriy Fedkovych Chernivtsi Natl Univ, Dept Elect & Energy Engn, UA-58012 Chernovtsy, Ukraine

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 01期

关键词：

SOLAR-CELLS; ELECTRICAL-PROPERTIES; INTERFACE STATES; CDTE-FILMS; EFFICIENCY; TRANSPORT;

D O I：

10.1088/0268-1242/28/1/015014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the results of an investigation into electrical and photoelectrical properties of anisotype heterojunctions n-TiO2/p-Cd1-xZnxTe prepared by the dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-Cd1-xZnxTe single crystal substrates. The heterojunctions were established to be abrupt surface-barrier semiconductor structures with the uniform distribution of uncompensated acceptors within the space charge region, which is located in the narrow-band semiconductor. The dominating mechanisms of charge transport were analyzed in the scope of tunnel-recombination processes via interface states and complex defects (VCd-2D+)(-1) at forward and reverse biases. The main photoelectric parameters and the spectral distribution of actual quantum efficiency were measured at room temperature.

引用

页数：6

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