Mechanism of non-metal catalytic growth of graphene on silicon

被引：45

作者：

Hong, Guo ^{[1
]}

Wu, Qi-Hui ^{[1
]}

Ren, Jianguo ^{[1
]}

Lee, Shuit-Tong ^{[1
]}

机构：

[1] City Univ Hong Kong, Ctr Super Diamond & Adv Films, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 23期

关键词：

LARGE-AREA; FILMS;

D O I：

10.1063/1.4726114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Compared to preparation on metal substrates, graphene synthesis on non-metal surfaces is highly desirable to avoid the deleterious metallic effects in fabrication of electronic devices. However, study of graphene growth mechanism on non-metal surfaces is rare and little understood. Here, we report that few-layers graphene films can be grown directly on silicon-on-insulator surface. Furthermore, the graphene growth mechanism on non-metal surfaces is proposed as a surface reaction, adsorption, decomposition, and accumulation process. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726114]

引用

页数：5

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