InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

被引：22

作者：

Park, Min-Su ^{[1
]}

Rezaei, Mohsen ^{[1
]}

Nia, Iman ^{[1
]}

Brown, Robert ^{[1
]}

Bianconi, Simone ^{[1
]}

Tan, Chee Leong ^{[1
]}

Mohseni, Hooman ^{[1
]}

机构：

[1] Northwestern Univ, Bioinspired Sensors & Optoelect Lab BISOL, EECS, 2145 Sheridan Rd, Evanston, IL 60208 USA

来源：

OPTICAL MATERIALS EXPRESS | 2018年 / 8卷 / 02期

基金：

美国国家科学基金会;

关键词：

OHMIC CONTACTS; METALLIZATION;

D O I：

10.1364/OME.8.000413

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Integration of an InGaAs/InP quantum well infrared photodetector (QWIP) onto a Si substrate was successfully demonstrated via a metal-assisted wafer bonding (MWB) using a Mo/Au metal scheme. The Mo/Au/Mo layer, situated between the QWIP structure and the Si, has shown a well-ordered lamination. It provides a smooth surface with a roughness of about 0.8 nm, as measured by a scanning electron microscope (SEM) and atomic force microscopy (AFM). The results on crystalline quality evaluated by Raman spectroscopy and X-ray diffraction (XRD) imply that the MWB could be achieved without any measurable material degradation and residual strain. Temperature dependence of dark current revealed that there is no noticeable change in the dark current properties of the QWIP after bonding on Si, despite that the quantum wells are only 200 nm away from the bonding interface. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：413 / 419

页数：7