Organic ferroelectric diodes with long retention characteristics suitable for non-volatile memory applications

被引：37

作者：

Fujisaki, Sumiko ^{[1
]}

Ishiwara, Hiroshi ^{[1
]}

Fujisaki, Yoshihisa ^{[2
]}

机构：

[1] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Tokyo 2268502, Japan

[2] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

APPLIED PHYSICS EXPRESS | 2008年 / 1卷 / 08期

关键词：

D O I：

10.1143/APEX.1.081801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Retention performance of organic metal-ferroelectric-insulator-semiconductor (MRS) diodes composed of random copolymer poly(vinylidene fluoride)-trifluoroethylene [P(VDF-TrFE)] was drastically improved by introducing poly(methyl methacrylate) (PMMA). Only a small amount of PMMA blended to P(VDF-TrFE) copolymer improved the insulating property of thin ferroelectric films. The MRS diode with 1.65 wt % PMMA-blended P(VDF-TrFE) film achieved the retention time longer than 10(6) s until now and it showed no obvious degradation of switching charge. Precise control of PMMA composition and the crystallization condition made it possible to achieve the above mentioned performance. (C) 2008 The Japan Society of Applied Physics.

引用

页码：0818011 / 0818013

页数：3

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