Direct Solvothermal Synthesis of B/N-Doped Graphene**

被引：63

作者：

Jung, Sun-Min ^{[1
]}

Lee, Eun Kwang ^{[2
]}

Choi, Min ^{[1
]}

Shin, Dongbin ^{[1
]}

Jeon, In-Yup ^{[1
]}

Seo, Jeong-Min ^{[1
]}

Jeong, Hu Young ^{[3
]}

Park, Noejung ^{[1
]}

Oh, Joon Hak ^{[2
]}

Baek, Jong-Beom ^{[1
]}

机构：

[1] UNIST, Interdisciplinary Sch Green Energy, Low Dimens Carbon Mat Ctr, Ulsan 689798, South Korea

[2] UNIST, Sch Energy & Chem Engn, Low Dimens Carbon Mat Ctr, Ulsan 689798, South Korea

[3] UNIST, UNIST Cent Res Facilities, Sch Mech & Adv Mat Engn, Ulsan 689798, South Korea

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2014年 / 53卷 / 09期

基金：

新加坡国家研究基金会;

关键词：

boron; doping; field effect transistors; graphene; nitrogen; TRANSPARENT; FUNCTIONALIZATION; NANOPLATELETS; FILMS; OXIDE; AREA;

D O I：

10.1002/anie.201310260

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Heteroatom-doping into graphitic networks has been utilized for opening the band gap of graphene. However, boron-doping into the graphitic framework is extremely limited, whereas nitrogen-doping is relatively feasible. Herein, boron/nitrogen co-doped graphene (BCN-graphene) is directly synthesized from the reaction of CCl4, BBr3, and N-2 in the presence of potassium. The resultant BCN-graphene has boron and nitrogen contents of 2.38 and 2.66atom%, respectively, and displays good dispersion stability in N-methyl-2-pyrrolidone, allowing for solution casting fabrication of a field-effect transistor. The device displays an on/off ratio of 10.7 with an optical band gap of 3.3eV. Considering the scalability of the production method and the benefits of solution processability, BCN-graphene has high potential for many practical applications.

引用

页码：2398 / 2401

页数：4

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