The Ways Of Silicon Carbide Usage in Field-Emission Devices: the Technological Aspect

被引：0
作者：
Shelepin, N. [1 ]
Matyushkin, I. [1 ]
Orlov, S. [1 ]
Ermakov, A. [1 ]
Svechkarev, K. [1 ]
Bobovnikov, P. [1 ]
Mikhaylov, A.
Belov, A.
机构：
[1] MERI, JSC Mol Elect Res Inst, Lab Perspect Technol, Moscow, Russia
来源：
2013 IEEE XXXIII INTERNATIONAL SCIENTIFIC CONFERENCE ELECTRONICS AND NANOTECHNOLOGY (ELNANO) | 2013年
关键词：
field emission; SiC; carbon; CVD; ion implantation; NANOWIRES; NANORODS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In general cold field emission of SiC and other cathodes are compared. Possible applications of SiC for field emission cathodes and some of technological methods are considered. Also our results on the CVD-manufactured P-doped SiC-films are presented. Lastly our results on the ion-synthesized SiC-nanoinclusions in the silicon surface layer are discussed.
引用
收藏
页码：177 / 180
页数：4
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