Black phosphorus electronic and optoelectronic devices

被引:93
作者
Miao, Jinshui [1 ]
Zhang, Lei [2 ]
Wang, Chuan [3 ]
机构
[1] Univ Penn, Dept Elect & Syst Engn, Philadelphia, PA 19104 USA
[2] Hubei Univ, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Key Lab Green Preparat & Applicat Funct Mat, Minist Educ,Sch Mat Sci & Engn, Wuhan 430062, Hubei, Peoples R China
[3] Washington Univ, Dept Elect & Syst Engn, St Louis, MO 63130 USA
关键词
2D materials; black phosphorus; electronics; optoelectronics; GRAPHENE; TRANSISTORS; AMBIPOLAR; GAS; EXFOLIATION; PASSIVATION; ORIENTATION; MODULATION; TRANSPORT;
D O I
10.1088/2053-1583/ab1ebd
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper reviews the recent progress on electronic and optoelectronic devices based on 2D black phosphorus (BP). First, the crystal structure, band structure, and optical properties of BP, as well as some currently-known passivation methods used for making BP stable in ambient conditions are briefly summarized. Device architectures and operating principles of the state-of-the-art few-layer BP based electronic and optoelectronic devices will then be discussed in detail, with a focus on field-effect transistors, heterojunction diodes, and photodetectors. Next, solution-based exfoliation methods aimed for addressing the scalability challenge faced by BP are briefly discussed, followed by their potential applications in gas sensors and biomedicine. By reviewing recent process and discussing remaining challenges faced by BP, this paper aims to provide perspectives on opportunities and future research directions for utilizing BP and moving towards practical applications.
引用
收藏
页数:16
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