Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

被引：122

作者：

Sinha, Jaivardhan ^{[1
]}

Hayashi, Masamitsu ^{[1
]}

Kellock, Andrew J. ^{[2
]}

Fukami, Shunsuke ^{[3
]}

Yamanouchi, Michihiko ^{[3
,4
]}

Sato, Hideo ^{[3
]}

Ikeda, Shoji ^{[3
,4
]}

Mitani, Seiji ^{[1
]}

Yang, See-hun ^{[2
]}

Parkin, Stuart S. P. ^{[2
]}

Ohno, Hideo ^{[3
,4
,5
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

[2] IBM Almaden Res Ctr, San Jose, CA 95120 USA

[3] Tohoku Univ, Ctr Spintron Integrated Syst, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

[5] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期

基金：

日本学术振兴会;

关键词：

BOND-ORIENTATIONAL ANISOTROPY; DOMAIN-WALL; DEPENDENCE; GLASSES;

D O I：

10.1063/1.4811269

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that the magnetic characteristics of Ta vertical bar CoFeB vertical bar MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation magnetization drops upon doping the Ta underlayer, suggesting that the doped underlayer acts as a boron diffusion barrier. In addition, the thickness of the magnetic dead layer decreases with increasing nitrogen doping. Surprisingly, the interface magnetic anisotropy increases to similar to 1.8 erg/cm(2) when an optimum amount of nitrogen is introduced into the Ta underlayer. These results show that nitrogen doped Ta serves as a good underlayer for spintronic applications including magnetic tunnel junctions and domain wall devices. (C) 2013 AIP Publishing LLC.

引用

页数：4

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