Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation

被引：32

作者：

Fischer, A. M. ^{[1
]}

Wei, Y. O. ^{[1
]}

Ponce, F. A. ^{[1
]}

Moseley, M. ^{[2
]}

Gunning, B. ^{[2
]}

Doolittle, W. A. ^{[2
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Adv Semicond Technol Facil, Atlanta, GA 30332 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 13期

基金：

美国国家科学基金会;

关键词：

PHASE-SEPARATION; GAN; HETEROSTRUCTURES; DISLOCATIONS; EPILAYERS; SPECTRA; EPITAXY; ALLOYS;

D O I：

10.1063/1.4822122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the properties of thick InxGa1-xN films, with indium content ranging from x similar to 0.22 to 0.67, grown by metal-modulated epitaxy. While the low indium-content films exhibit high density of stacking faults and dislocations, a significant improvement in the crystalline quality and optical properties has been observed starting at x similar to 0.6. Surprisingly, the InxGa1-xN film with x similar to 0.67 exhibits high luminescence intensity, low defect density, and uniform full lattice-mismatch strain relaxation. The efficient strain relaxation is shown to be due to a critical thickness close to the monolayer range. These films were grown at low temperatures (similar to 400 degrees C) to facilitate indium incorporation and with precursor modulation to enhance surface morphology and metal adlayer diffusion. These findings should contribute to the development of growth techniques for nitride semiconductors under high lattice misfit conditions. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 25 条

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