Superior Field Emissions from Boron-Doped Nanocrystalline Diamond Compared to Boron-Doped Microcrystalline Diamond

被引:2
|
作者
Le Shim, Ee [1 ]
Lee, Min Ho [1 ]
Lu, Ming-Yen [2 ]
Kang, Chi Jung [1 ,3 ]
Lee, Kyu-Wang [4 ]
Choi, Young Jin [1 ,3 ]
机构
[1] MyongJi Univ, Dept Phys, Yongin 449728, South Korea
[2] Natl Chung Cheng Univ, Grad Inst Optomechatron, Min Hsiung 621, Chia Yi, Taiwan
[3] MyongJi Univ, Dept Nano Sci & Engn, Yongin 449728, South Korea
[4] MyongJi Univ, Dept Chem, Yongin 449728, South Korea
关键词
Microcrystalline Diamond; Nanocrystalline Diamond; Boron-Doped Diamond; Field Emission; VAPOR-DEPOSITED DIAMOND; THIN-FILM ELECTRODES; AMORPHOUS-CARBON; CATHODES; PRESSURE; GROWTH; FIBERS;
D O I
10.1166/jnn.2012.6702
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Boron-doped microcrystalline diamond (BMD) and nanocrystalline diamond (BND) thin films were grown on Si substrates by microwave-assisted chemical vapor deposition, and their field emission properties were evaluated. BND exhibited a lower turn-on field and higher field enhancement factor than BMD. Furthermore, in a long-term emission stability test, BND showed only a 4% increase in the current density after 12 h of emission, whereas the current density of BMD decreased by similar to 59%. These results indicate that BND is a more stable and viable current emitter than BMD.
引用
收藏
页码:8904 / 8907
页数:4
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