Superior Field Emissions from Boron-Doped Nanocrystalline Diamond Compared to Boron-Doped Microcrystalline Diamond

被引：2

作者：

Le Shim, Ee ^{[1
]}

Lee, Min Ho ^{[1
]}

Lu, Ming-Yen ^{[2
]}

Kang, Chi Jung ^{[1
,3
]}

Lee, Kyu-Wang ^{[4
]}

Choi, Young Jin ^{[1
,3
]}

机构：

[1] MyongJi Univ, Dept Phys, Yongin 449728, South Korea

[2] Natl Chung Cheng Univ, Grad Inst Optomechatron, Min Hsiung 621, Chia Yi, Taiwan

[3] MyongJi Univ, Dept Nano Sci & Engn, Yongin 449728, South Korea

[4] MyongJi Univ, Dept Chem, Yongin 449728, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2012年 / 12卷 / 12期

关键词：

Microcrystalline Diamond; Nanocrystalline Diamond; Boron-Doped Diamond; Field Emission; VAPOR-DEPOSITED DIAMOND; THIN-FILM ELECTRODES; AMORPHOUS-CARBON; CATHODES; PRESSURE; GROWTH; FIBERS;

D O I：

10.1166/jnn.2012.6702

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Boron-doped microcrystalline diamond (BMD) and nanocrystalline diamond (BND) thin films were grown on Si substrates by microwave-assisted chemical vapor deposition, and their field emission properties were evaluated. BND exhibited a lower turn-on field and higher field enhancement factor than BMD. Furthermore, in a long-term emission stability test, BND showed only a 4% increase in the current density after 12 h of emission, whereas the current density of BMD decreased by similar to 59%. These results indicate that BND is a more stable and viable current emitter than BMD.

引用

页码：8904 / 8907

页数：4

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