In-plane piezoelectric coefficient of PZT thin films as a function of composition

被引：0

作者：

Muralt, P ^{[1
]}

Dubois, MA ^{[1
]}

Seifert, A ^{[1
]}

Taylor, DV ^{[1
]}

Ledermann, N ^{[1
]}

Hiboux, S ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Lab Ceram, CH-1015 Lausanne, Switzerland

来源：

FERROELECTRICS | 1999年 / 224卷 / 1-4期

关键词：

piezoelectricity; ferroelectricity; thin films;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effective piezoelectric coefficient e(31) has been measured on sol-gel processed Pb(ZrxTi1-x)O-3 thin films with Zr concentrations ranging from 45 to 60%. The largest value was observed at 45% Zr, although dielectric constant and effective d(33) peak at 53% Zr. The findings suggest that the optimal composition for microactuators and sensors is less than or equal to 45% Zr, i.e., in the tetragonal part of the phase diagram.

引用

页码：663 / 670

页数：8

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