Optical and structural studies of dual wavelength InGaN/GaN tunnel-injection light emitting diodes grown by metalorganic chemical vapor deposition

被引：13
作者：
Feng, Zhe Chuan [1 ,2 ]
Zhu, Li-Hong [3 ]
Kuo, Ting-Wei [1 ,2 ]
Wu, C. -Y. [4 ]
Tsai, Hong-Ling [5 ]
Liu, Bao-Lin [6 ]
Yang, Jer-Ren [5 ]
机构：
[1] Natl Taiwan Univ, Inst Photon & Optoelect, Dept Elect Engn, Taipei 10617, Taiwan
[2] Natl Taiwan Univ, Ctr Emerging Mat & Adv Devices, Taipei 10617, Taiwan
[3] Xiamen Univ, Dept Elect Sci, Xiamen 361005, Peoples R China
[4] Uni Light Technol Corp, Tao Yuan, Taiwan
[5] Natl Taiwan Univ, Dept Mat Sci & Engn, Taipei 10617, Taiwan
[6] Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China
来源：
THIN SOLID FILMS | 2013年 / 529卷
基金：
中国国家自然科学基金;
关键词：
Metalorganic chemical vapor deposition (MOCVD); InGaN/GaN; Multiple quantum well (MQW); X-ray diffraction (XRD); Transmission electron microscopy (TEM); Photoluminescence (PL); Photoluminescence excitation (PLE); QUANTUM-WELLS; EXCITON LOCALIZATION; STOKES SHIFT; STRAIN; LUMINESCENCE; MECHANISM; EMISSION;
D O I：
10.1016/j.tsf.2012.05.038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InGaN/GaN multiple quantum well light emitting diodes with charge asymmetric resonance tunneling structure, which can emit dual color lights of blue/green or blue/yellow, were grown on sapphire by metalorganic chemical vapor deposition. Their optical and structural properties are studied by high-resolution X-ray diffraction, high-resolution transmission electron microscopy, temperature-dependent photoluminescence (PL) and photoluminescence excitation (PLE). PL peak shifts and PLE features are found to vary with the well-growth temperature. The luminescence mechanism is discussed in details, correlating to the In composition fluctuation, carrier localization and the quantum confined Stark effect. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：269 / 274
页数：6
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