Strain-induced robust magnetic anisotropy and room temperature magnetoelectric coupling effect in epitaxial SmFeO3 film

被引:9
作者
Zhang, Jun [1 ,2 ,3 ,4 ,5 ]
Xue, Wuhong [1 ,2 ,4 ,5 ]
Su, Tiancong [1 ,2 ,4 ,5 ]
Ji, Huihui [1 ,2 ,4 ,5 ]
Yan, Zhi [1 ,2 ,4 ,5 ]
Zhou, Guowei [1 ,2 ,4 ,5 ]
Quan, Zhiyong [1 ,2 ,4 ,5 ]
Xu, Xiaohong [1 ,2 ,4 ,5 ]
机构
[1] Shanxi Normal Univ, Sch Chem & Mat Sci, Linfen 041004, Shanxi, Peoples R China
[2] Minist Educ, Key Lab Magnet Mol & Magnet Informat Mat, Linfen 041004, Shanxi, Peoples R China
[3] Lvliang Univ, Dept Chem & Chem Engn, Lvliang 033001, Peoples R China
[4] Shanxi Normal Univ, Res Inst Mat Sci, Linfen 041004, Shanxi, Peoples R China
[5] Collaborat Innovat Ctr Shanxi Adv Permanent Magne, Linfen 041004, Shanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
SmFeO3; film; multiferroicity; magnetoelectric coupling; magnetic anisotropy; MULTIFERROICITY; POLARIZATION;
D O I
10.1007/s40843-020-1391-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Rare-earth orthoferrite SmFeO3 is an outstanding single-phase multiferroic material, holding great potential in novel low-power electronic devices. Nevertheless, simultaneous magnetic and ferroelectric orders as well as magnetoelectric (ME) coupling effect at room temperature (RT) in this system have not been demonstrated yet. In this study, epitaxial SmFeO3 films were successfully prepared onto tensile-strain Nb-SrTiO3(Nb-STO) substrates by a pulsed laser deposition (PLD) method. Measurement results show that the films exhibit obvious ferromagnetic and ferroelectric orders at RT. Meanwhile, the magnetic anisotropy gradually changes from out-of-plane (OP) to in-plane (IP) direction with increasing film thickness, which is attributed to the variations of O 2p-Fe 3d hybridization intensity and Fe 3d-orbit occupancy caused by the strain-relaxed effect. Moreover, electrically driven reversible magnetic switching further proves that the SmFeO3 films exhibit the RT ME coupling effect, suggesting promising applications in new-generation electric-write magnetic-read data storage devices.
引用
收藏
页码:2062 / 2070
页数:9
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