Influence of hydrogen addition to an Ar plasma on the structural properties of TiO2-x thin films deposited by RF sputtering

被引:54
作者
Luciu, I. [1 ,2 ]
Bartali, R. [2 ]
Laidani, N. [2 ]
机构
[1] Univ Trento, Dept Phys, I-38123 Povo, Trento, Italy
[2] Fdn Bruno Kessler, I-38123 Povo, Trento, Italy
关键词
X-RAY-ABSORPTION; TRANSPARENT CONDUCTING OXIDE; TITANIUM-DIOXIDE; OXYGEN VACANCIES; SURFACE SCIENCE; ADSORPTION; TIO2(110); STATE; WATER; DEFECTS;
D O I
10.1088/0022-3727/45/34/345302
中图分类号
O59 [应用物理学];
学科分类号
摘要
The influence of hydrogen addition to an Ar plasma on the structural properties of TiO2-x films produced by RF sputtering of a TiO2 target at room temperature was studied. The structural properties of the films were characterized by x-ray photoelectron spectroscopy while the surface morphology was analysed using scanning electron microscopy (SEM). The valence band analysis showed the crystal field splitting of d states into doubly and triply degenerate states. H-2 addition to the Ar plasma created additional d-state splitting due to distortions in the TiO2 structure by the Jahn-Teller mechanism. The occurrence of the Jahn-Teller split is well-correlated with oxygen vacancies in the TiO2-x films. Water adsorption at the TiO2-x surface and film hydroxylation were also addressed. The as-grown films were amorphous and SEM analysis showed a columnar structure for all the films but with a lower packing density of the columns after H-2 introduction in the Ar plasma.
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页数:9
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