Pentacene thin film transistor using organic material as a gate insulator
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作者:
Kim, OB
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机构:Hongik Univ, Dept Control & Elect Engn, Mapo Ku, Seoul, South Korea
Kim, OB
Kim, YM
论文数: 0引用数: 0
h-index: 0
机构:Hongik Univ, Dept Control & Elect Engn, Mapo Ku, Seoul, South Korea
Kim, YM
Kim, YK
论文数: 0引用数: 0
h-index: 0
机构:Hongik Univ, Dept Control & Elect Engn, Mapo Ku, Seoul, South Korea
Kim, YK
Kim, JS
论文数: 0引用数: 0
h-index: 0
机构:Hongik Univ, Dept Control & Elect Engn, Mapo Ku, Seoul, South Korea
Kim, JS
机构:
[1] Hongik Univ, Dept Control & Elect Engn, Mapo Ku, Seoul, South Korea
[2] Hongik Univ, Dept Chem Engn, Mapo Ku, Seoul, South Korea
来源:
MOLECULAR CRYSTALS AND LIQUID CRYSTALS
|
2001年
/
370卷
关键词:
organic thin film transistor;
pentacene;
transfer characteristic;
output characteristics;
organic gate insulator;
D O I:
10.1080/10587250108030116
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Organic thin film transistors were fabricated using pentacene and organic gate insulator on the glass substrates. Polyimide and photo-acryl were used as a gate insulator respectively. We investigated transfer and output characteristics of the thin film transistors(TFT's) having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene TFT's, and measured IR absorption spectrum of polyimide used as gate insulator.