Switchable and Tunable Band Stop Filter

被引:0
作者
Matoug, Abdulhamid [1 ]
Kalkur, T. S. [1 ]
机构
[1] Univ Colorado, Dept Elect & Comp Engn, Colorado Springs, CO 80933 USA
来源
2017 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS) | 2017年
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we present the design and fabrication of switchable and tunable thin film bulk acoustic wave resonator (FBAR) and stop band filter based on Barium Strontium Titanate (Ba.07Sr0.3TiO3) deposited by metalorganic decomposition method (MOD). FBAR filter was implemented using an acoustic Bragg reflector of alternating high impedance tantalum oxide and low impedance silicon dioxide layers. Filter consist of four FBARs, two series and two parallel. Without dc voltage, there is no frequency switching with high insertion loss. With applied dc bias (10 V) to the four resonator, the filter has exhibited stop band response with center at frequency 4.76 GHz with 13.5 dB insertion loss.
引用
收藏
页码:2262 / 2267
页数:6
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