Assessment of Li-Ga-N ternary system and GaN single crystal growth

Phase diagram of the system Li-Ga-N was constructed and assessed by using the calculation of the phase diagram (CALPHAD) method. The phase diagram suggests that GaN crystal can be grown from the Ga-rich Li-Ga-N ternary solution under 1-2 atmospheric pressure of N-2 and moderate temperature. Using starting materials Li3N and Ga with molar ratio 1:3, colorless transparent GaN platelets with sizes 3-4 mm were obtained at 800degreesC and under 1 atm nitrogen atmosphere. (C) 2003 Elsevier B.V. All rights reserved.