ZnS/ZnO heterojunction as photoelectrode: Type H band alignment towards enhanced photoelectrochemical performance

被引：101

作者：

Guo, Penghui ^{[1
]}

Jiang, Jiangang ^{[1
]}

Shen, Shaohua ^{[1
]}

Guo, Liejin ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Int Res Ctr Renewable Energy, State Key Lab Multiphase Flow Power Engn, Xian 710049, Shaanxi, Peoples R China

来源：

INTERNATIONAL JOURNAL OF HYDROGEN ENERGY | 2013年 / 38卷 / 29期

基金：

中国国家自然科学基金;

关键词：

ZnS/ZnO heterojunction; Electron injection; PEC; ZNO; NANOWIRES; EFFICIENT; ZNO/ZNS; PHOTOLUMINESCENCE; NANOSTRUCTURES; NANOCABLES; MISMATCH; DEFECTS; FILMS;

D O I：

10.1016/j.ijhydene.2013.01.184

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Heterojunction structures are attracting lots of attention for enhancing the electron injection across the interface. The ZnS/ZnO one-dimensional heterojunction film was firstly prepared via a chemical sulfidization following hydrothermal reaction. The heterostructure was characterized as ZnS(blende)/ZnO(wurtzite) shell-core nanorods via XRD, SEM and TEM. A type II band alignment structure of ZnS/ZnO composite was synthesized via a temperate condition proved by PLS and XPS. The values for valence band offset (VBO) and conduction band offset (CBO) were calculated to be 0.96 eV and 1.25 eV, respectively. The special electron structure in the heterojunction helped reduce the energy barrier height at the interface and enhance the separation of photo-generated carriers. Thus, the photoelectrochemical performance was highly improved, and a photocurrent density of 380 mu A/cm(2) at 0.9 V (vs. Ag/AgCl) was obtained. Copyright (C) 2013, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.

引用

页码：13097 / 13103

页数：7

共 40 条

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