Orientation and rate dependence in high strain-rate compression of single-crystal silicon

被引：30

作者：

Smith, R. F. ^{[1
]}

Minich, R. W. ^{[1
]}

Rudd, R. E. ^{[1
]}

Eggert, J. H. ^{[1
]}

Bolme, C. A. ^{[2
]}

Brygoo, S. L. ^{[3
]}

Jones, A. M. ^{[1
]}

Collins, G. W. ^{[1
]}

机构：

[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA

[3] DIF, DAM, CEA, F-91297 Arpajon, France

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 24期

关键词：

PHASE-TRANSITION; PRECURSOR DECAY; SHOCK-WAVE; PRESSURE; DEFORMATION; DYNAMICS; STRENGTH;

D O I：

10.1103/PhysRevB.86.245204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High strain-rate ((epsilon)over dot similar to 10(6)-10(9) s(-1)) compression of single crystal Si reveals strong orientation- and rate-dependent precursor stresses. At these high compression rates, the peak elastic stress, sigma(E_Peak), for Si [100], [110], and [111] exceeds twice the Hugoniot elastic limit. Near the loading surface, the rate at which Si evolves from uniaxial compression to a three-dimensional relaxed state is exponentially dependent on sigma(E_Peak) and independent of initial crystal orientation. At later times, the high elastic wave speed results in a temporal decoupling of the elastic precursor from the main inelastic wave. A rapid high-(epsilon)over dot increase in the measured elastic stress at the onset of inelastic deformation is consistent with a transition from dislocation flow mediated by thermal activation to a phonon drag regime. DOI: 10.1103/PhysRevB.86.245204

引用

页数：10

共 39 条

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