Modeling of epitaxial silicon carbide deposition

被引：18

作者：

Veneroni, Alessandro ^{[1
]}

Omarini, Fabrizio ^{[1
]}

Moscatelli, Davide ^{[1
]}

Masi, Maurizio ^{[1
]}

Leone, Stefano ^{[2
]}

Mauceri, Marco ^{[2
]}

Pistone, Giuseppe ^{[2
]}

Abbondanza, Giuseppe ^{[2
]}

机构：

[1] Politecn Milan, Dipartimento Chim Mat & Ingn Chim Giulio Natta, I-20131 Milan, Italy

[2] Epitaxial Technol Ctr, Catania, Italy

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Fluid flows; Chemical vapor deposition processes; Semiconductor materials; Semiconductor silicon carbide compounds;

D O I：

10.1016/j.jcrysgro.2004.10.104

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The availability of reliable chemical kinetics data is still a key factor in designing epitaxial deposition reactors able to obtain electronic grade surface quality for SiC films. Here, a literature mechanism was considered for the gas phase while a new multi species surface one was introduced. That detailed mechanism was embedded in a series of reactor models of different complexity (1D-3D) to realize a multi hierarchy modeling approach. In the framework of horizontal hot wall reactor with multiwafer rotating susceptor, several process parameters were examined. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：E295 / E300

页数：6

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