Investigation on the Activation Energy of Device Degradation and Switching Time in AlGaN/GaN HEMTs for High-Frequency Application

被引：5

作者：

Lei, Jianming ^{[1
]}

Wang, Rui ^{[1
]}

Yang, Guo ^{[1
]}

Wang, Jin ^{[1
]}

Chen, Dunjun ^{[1
]}

Lu, Hai ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

关键词：

AlGaN/GaN HEMT; activation energy; dynamic on-resistance; switching time; ANALYTICAL LOSS MODEL; DIELECTRIC-BREAKDOWN; CURRENT COLLAPSE; DEEP TRAPS; GAN HEMTS; FIELD; MECHANISMS;

D O I：

10.1109/JEDS.2019.2906353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the influence of traps on the dynamic on-resistance (R-d(son)) and switching time of AlGaN/GaN high-electron-mobility transistors is validated by means of a switching power converter with floating buck-boost topology. A new scheme based on the voltage-dependent dynamic R-d(son) is proposed to extract the average activation energy of device degradation. The average activation energy obtained is 2.25 eV at 50-200 V and 2.60 eV at 200-600 V. In addition, the dynamic R-d(son) is accurately extracted by a unique extraction circuit with high switching frequency up to 1 MHz and high off-state voltage up to 600 V. Meanwhile, the switching times at turn-on and turn-off transitions are captured in a floating buck-boost converter, showing that the transconductance decreases with increasing drain voltage. Furthermore, the effect of parasitic output capacitor on the dynamic R-d(son) is investigated by an experimental method. Finally, a proper hard operating mode is proposed to alleviate the influence of the trapping effect on the performance of switching power converters.

引用

页码：417 / 424

页数：8

共 36 条

[1]

[Anonymous], 2016, CHINESE PHYS B, DOI DOI 10.1088/1674-1056/25/12/127305

[2]

[Anonymous], 2016, GN001 APPL GUID DES

[3]

[Anonymous], 2018, GS66502B BOTT SID CO

[4]

[Anonymous], 2013, STAT ART 2D 3D PROC, V23

[5] Impact of the field induced polarization space-charge on the characteristics of AlGaN/GaN HEMT: Self-consistent simulation study [J].

Balaz, D. ;

Kalna, K. ;

Kuball, M. ;

Uren, M. J. ;

Asenov, A. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 :S1007-S1011

[6] Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements [J].

Bisi, Davide ;

Meneghini, Matteo ;

de Santi, Carlo ;

Chini, Alessandro ;

Dammann, Michael ;

Brueckner, Peter ;

Mikulla, Michael ;

Meneghesso, Gaudenzio ;

Zanoni, Enrico .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3166-3175

[7]

CARDWELL DW, 2013, J APPL PHYS, V102

[8] A NEW METHOD TO DETERMINE MOSFET CHANNEL LENGTH [J].

CHERN, JGJ ;

CHANG, P ;

MOTTA, RF ;

GODINHO, N .

ELECTRON DEVICE LETTERS, 1980, 1 (09) :170-173

[9] Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs [J].

DasGupta, Sandeepan ;

Sun, Min ;

Armstrong, Andrew ;

Kaplar, Robert J. ;

Marinella, Matthew J. ;

Stanley, James B. ;

Atcitty, Stan ;

Palacios, Tomas .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (08) :2115-2122

[10]

Delaine J, 2012, APPL POWER ELECT CO, P1754, DOI 10.1109/APEC.2012.6166059

← 1 2 3 4 →