Compression of Ti3Si0.5Ge0.5C2 to 53 GPa

被引：53
|
作者：
Manoun, B
Liermann, HP
Gulve, RP
Saxena, SK
Ganguly, A
Barsoum, MW
Zha, CS
机构：
[1] Florida Int Univ, CeSMEC, Miami, FL 33199 USA
[2] Drexel Univ, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA
[3] Cornell Univ, Cornell High Energy Synchrotron Source, Wilson Lab, Ithaca, NY 14853 USA
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 15期
关键词：
D O I：
10.1063/1.1699477
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using a synchrotron radiation source and a diamond anvil cell, we measured the pressure dependence of the lattice parameters of a polycrystalline Ti3Si0.5Ge0.5C2 sample. Up to a pressure of 53 GPa, no phase transformations were observed. As for the isostructural hexagonal Ti3SiC2, the compressibility along the c axis was greater than along a. The bulk modulus is 183+/-4 GPa with a pressure derivative of 3.4+/-0.2. This work shows that the replacement of Si by Ge in Ti3SiC2 results in a systematic decrease in the bulk moduli. (C) 2004 American Institute of Physics.
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页码：2799 / 2801
页数：3
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