Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

被引：25

作者：

Chow, Yi Chao ^{[1
]}

Lee, Changmin ^{[1
]}

Wong, Matthew S. ^{[1
]}

Wu, Yuh-Renn ^{[2
,3
]}

Nakamura, Shuji ^{[1
,4
]}

DenBaars, Steven P. ^{[1
,4
]}

Bowers, John E. ^{[1
,4
]}

Speck, James S. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Mat Dept, Santa Barbara, CA 93106 USA

[2] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[4] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

OPTICS EXPRESS | 2020年 / 28卷 / 16期

基金：

美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; WAVELENGTH; POLARIZATION;

D O I：

10.1364/OE.399924

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We reported significant improvements in device speed by reducing the quantum barrier (QB) thicknesses in the InGaN/GaN multiple quantum well (MQW) photodetectors (PDs). A 3-dB bandwidth of 700 MHz was achieved with a reverse bias of -6 V. Carrier escape lifetimes due to carrier trapping in the quantum wells (QWs) were obtained from both simulation and experimental fitting, identifying carrier trapping as the major speed limiting factor in the InGaN/GaN MQW PDs. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：23796 / 23805

页数：10

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