Wafer level sealing characterization method using Si micro cantilevers

被引:13
作者
Okada, Hironao [1 ,2 ,3 ]
Itoh, Toshihiro [1 ,2 ,3 ]
Suga, Tadatomo [2 ,3 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058564, Japan
[2] Univ Tokyo, Sch Engn, Dept Precis Engn, Bunkyo Ku, Tokyo 1138656, Japan
[3] Japan Sci & Technol Agcy, CREST, Tokyo, Japan
关键词
sealing characterization; wafer lever; air damping; cantilever;
D O I
10.1016/j.sna.2008.05.012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, a wafer level sealing characterization method using the pressure dependence of the mechanical quality factor of Si micro cantilevers has been developed. Since the equation for design of a cantilever near fixed walls in free molecular flow regime has not been derived, a new equation has been Proposed. We determine that the minimum measurable pressure necessary for the characterization of MEMS sealing is 0.1 Pa, and the suitable sensor type is the resonant type using the optical measurement method. The devices are fabricated from silicon-on-insulator (SOI) and pyrex glass wafers and have many cavities in which there are three cantilever structures. A measurable pressure range of 10(-2) to 10(3) Pa is achieved. The errors in the quality factors calculated by the proposed equation are influenced by the cantilever dimensions; the energy dissipation of the cantilever (180 mu m x 40 mu m x 5 mu m) is calculated with an error of less than 22%. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:359 / 364
页数:6
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