Development status of Type-II superlattice infrared detector in JAXA

被引:4
作者
Sakai, Michito [1 ]
Murooka, Junpei [1 ]
Kumeta, Ayaka [1 ]
Katayama, Haruyoshi [1 ,4 ]
Kimura, Toshiyoshi [1 ]
Inada, Hiroshi [2 ]
Iguchi, Yasuhiro [2 ]
Hiroe, Yuta [3 ]
Kimata, Masafumi [3 ]
机构
[1] Japan Aerosp Explorat Agcy JAXA, Res & Dev Directorate, 2-1-1 Sengen, Tsukuba, Ibaraki 3058505, Japan
[2] Sumitomo Elect Ind Ltd, Transmission Devices Lab, Sakae Ku, 1 Taya Cho, Yokohama, Kanagawa 2448588, Japan
[3] Ritsumeikan Univ, Coll Sci & Engn, 1-1-1 Noji Higashi, Kusatsu, Shiga 5228577, Japan
[4] Japan Aerosp Explorat Agcy JAXA, Space Technol Directorate 1, 2-1-1 Sengen, Tsukuba, Ibaraki 3058505, Japan
来源
OPTICAL SENSING, IMAGING, AND PHOTON COUNTING: NANOSTRUCTURED DEVICES AND APPLICATIONS 2016 | 2016年 / 9933卷
关键词
Type-II superlattice; InAs/GaSb; InAs/GaInSb; focal plane array; very long-wavelength infrared; dark current; responsivity; INAS/GASB SUPERLATTICE; PERFORMANCE;
D O I
10.1117/12.2240300
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
One of JAXA's future missions, using an imaging Fourier Transform Spectrometer (FTS), require the focal plane array (FPA) that has high sensitivity and a very long-wavelength infrared (VLWIR) cutoff wavelength. Since a Type-II superlattice (T2SL) is the only known infrared material to have a theoretically predicted performance superior to that of HgCdTe and the cutoff wavelength can be tailored in the wavelength region of 3-30 mu m, we started the research and development of the T2SL detector in 2009. In order to confirm our final goal which is to realize an FPA with a cutoff wavelength of 15 mu m, we fabricated InAs/GaInSb T2SL infrared detectors with a cutoff wavelength of 15 mu m. We show the results of the dark current and responsivity measurement of single pixel detectors and the development status of FPAs including the image taken by a 320 x 256 InAs/GaInSb T2SL FPA with a cutoff wavelength of 15 mu m.
引用
收藏
页数:7
相关论文
共 13 条
[1]  
[Anonymous], 2008, SP09017E EORC JAP AE
[2]  
[Anonymous], 2012, ISC0903
[3]   Electrical and optical performance of InAs/GaSb superlattice LWIR detectors [J].
Field, M. ;
Sullivan, G. J. ;
Ikhlassi, A. ;
Grein, C. ;
Flatte, M. E. ;
Yang, H. ;
Zhong, M. ;
Weimer, M. .
QUANTUM SENSING AND NANOPHOTONIC DEVICES III, 2006, 6127
[4]   Performance improvement of longwave infrared photodetector based on type-II InAs/GaSb superlattices using unipolar current blocking layers [J].
Gautam, N. ;
Kim, H. S. ;
Kutty, M. N. ;
Plis, E. ;
Dawson, L. R. ;
Krishna, S. .
APPLIED PHYSICS LETTERS, 2010, 96 (23)
[5]   High Operability 1024x1024 Long Wavelength Infrared Focal Plane Array Base on Type-II InAs/GaSb Superlattice [J].
Haddadi, A. ;
Darvish, S. R. ;
Chen, G. ;
Hoang, A. M. ;
Nguyen, B-M. ;
Razeghi, M. .
15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15), 2011, 1416 :56-58
[6]   Optimum growth window for InAs/GaInSb superlattice materials tailored for very long wavelength infrared detection [J].
Haugan, Heather J. ;
Brown, Gail J. ;
Mahalingam, Krishnamurthy ;
Grazulis, Larry ;
Noe, Gary T. ;
Ogden, Nathan E. ;
Kono, Junichiro .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (02)
[7]  
Inada H., 2011, P SOC PHOTO-OPT INS, V8012
[8]   High Performance TypeII Superlattice Focal Plane Array with 6μm Cutoff Wavelength [J].
Miura, Kouhei ;
Machinaga, Ken-ichi ;
Balasekaran, Sundararajan ;
Kawahara, Takahiko ;
Migita, Masaki ;
Inada, Hiroshi ;
Iguchi, Yasuhiro ;
Sakai, Michito ;
Murooka, Junpei ;
Katayama, Haruyoshi ;
Kimata, Masafumi .
INFRARED TECHNOLOGY AND APPLICATIONS XLII, 2016, 9819
[9]   High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range [J].
Mohseni, H ;
Razeghi, M ;
Brown, GJ ;
Park, YS .
APPLIED PHYSICS LETTERS, 2001, 78 (15) :2107-2109
[10]   Recent advances in high performance antimonide-based superlattice FPAs [J].
Razeghi, M. ;
Huang, E. K. ;
Nguyen, B-M ;
Ramezani-Darvish, S. ;
Pour, S. Abdollahi ;
Chen, G. ;
Haddadi, A. ;
Hoang, M-A .
INFRARED TECHNOLOGY AND APPLICATIONS XXXVII, 2011, 8012